Defect structures in undoped and doped ZnO films studied by solid state diffusion

被引：7

作者：

Ryoken, H ^{[1
]}

Sakaguchi, I ^{[1
]}

Ohgaki, T ^{[1
]}

Ohashi, N ^{[1
]}

Adachi, Y ^{[1
]}

Haneda, H ^{[1
]}

机构：

[1] NIMS, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS IV-ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2005年 / 829卷

关键词：

D O I：

10.1557/PROC-829-B2.23

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Defect structures in ZnO thin films were studied to clarify the mechanism of charge compensation and crystallinity degradation induced by alloying. Regarding the undoped ZnO films, it was indicated that the degree of non-equilibrium behavior in the films deposited by PLD was much less than in the films prepared by the other two methods, i.e., NIBE and sputtering, and, moreover, the solid-state diffusion behavior in the PLD-grown undoped ZnO was close to that of bulk ZnO. The heavily Al-doped films and alloy films with high concentrations of MgO exhibited significant non-equilibrium behavior, even for those prepared by PLD. It was indicated that the high concentration of extrinsic elements, e.g., Al and Mg, introduces non-equilibrium defects into ZnO films and those defects are the cause of the crystallinity degradation and thermal instability of the films.

引用

页码：145 / +

页数：2

共 16 条

[1] Role of copper in the green luminescence from ZnO crystals [J].