Analysis of IGBT modules connected in series

被引:23
作者
Githiari, AN [1 ]
Palmer, PR [1 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
来源
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1998年 / 145卷 / 05期
关键词
numerical analysis; bipolar transistors;
D O I
10.1049/ip-cds:19982123
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An analysis is presented of IGBTs connected in series, with reference to the phenomenon of parasitic oscillation. A linear model is developed for use in the study. Two methods are proposed; an analytical approach and a numerical approach based on the state space analysis. The analytical approach offers insight into the effect of the various parameters, whereas the numerical approach offers greater accuracy as it makes fewer assumptions. The theoretical analysis is corroborated by the experimental results from a step-up convertor. Conclusions are drawn concerning the circuit design, and appropriate experimental results are provided, illustrating near ideal operation.
引用
收藏
页码:354 / 360
页数:7
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