ANALYSIS OF THE OUTPUT CONDUCTANCE OF INSULATED GATE TRANSISTORS

被引：5

作者：

BALIGA, BJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 12期

关键词：

D O I：

10.1109/EDL.1986.26520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：686 / 688

页数：3

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