CORRELATION OF EXPERIMENTS WITH A 2-SECTION-MODEL THEORY OF SATURATION DRAIN CONDUCTANCE OF MOS TRANSISTORS

被引：16

作者：

CHIU, TL

SAH, CT

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 12期

关键词：

D O I：

10.1016/0038-1101(68)90006-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1149 / +

页数：1

共 17 条

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[9] CONDITIONS AT A P-N JUNCTION IN THE PRESENCE OF COLLECTED CURRENT [J].

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[10] EFFECTS OF MODIFIED COLLECTOR BOUNDARY CONDITIONS ON THE BASIC PROPERTIES OF A TRANSISTOR [J].

MIDDLEBROOK, RD .

SOLID-STATE ELECTRONICS, 1963, 6 (06) :573-588

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