PINCH OFF IN INSULATED-GATE FIELD-EFFECT TRANSISTORS

被引：3

作者：

GOLDBERG, C

HEIMAN, FP

HOFSTEIN, SR

机构：

来源：

关键词：

D O I：

10.1109/PROC.1964.2938

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：414 / &

共 6 条

[1]

HOFSTEIN, 1963, P IEEE, V51, P1192

[2] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

HOFSTEIN, SR ;

HEIMAN, FP .

KINGSTON, RH ;

NEUSTADTER, SF .

[4] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

[5] TFT - NEW THIN-FILM TRANSISTOR [J].

WEIMER, PK .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (06) :1462-&

[6] SPACE-CHARGE-LIMITED SOLID-STATE DEVICES [J].

WRIGHT, GT .