Fabrication and simulation of GaSb thermophotovoltaic cells

被引：100

作者：

Sulima, OV ^{[1
]}

Bett, AW ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst, D-79100 Freiburg, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 66卷 / 1-4期

关键词：

photovoltaic cells; thermophotovoltaics; GaSb; Zn diffusion;

D O I：

10.1016/S0927-0248(00)00235-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper we report on the recent progress in fabrication and simulation of GaSb photovoltaic (PV) cells with a Zn diffused emitter. The form of Zn profiles in the emitter has an essential impact on the power output of a PV cell. Different types of Zn profiles were realized and used for simulation of PV device parameters. Calculations based on PV cell measurements show that efficiencies up to 30% can be achieved assuming a blackbody temperature of 1300-1500 K and a perfect band edge filter. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：533 / 540

页数：8

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) :448-457

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