UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

被引：31

作者：

Lanza, M. ^{[1
]}

Porti, M. ^{[1
]}

Nafria, M. ^{[1
]}

Aymerich, X. ^{[1
]}

Whittaker, E. ^{[2
]}

Hamilton, B. ^{[2
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] Univ Manchester, Manchester M60 JQD, Lancs, England

来源：

MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 9-11期

关键词：

ATOMIC-FORCE MICROSCOPY; THIN SIO2-FILMS; GATE STACKS; SIO2; RELIABILITY; STRESSES; VOLTAGE; OXIDES; TIPS;

D O I：

10.1016/j.microrel.2010.07.049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a Conductive Atomic Force Microscopy (CAFM) working in contact mode has been used to compare the measured electrical properties and breakdown (BD) on ultra thin high-k dielectrics, when different environmental conditions are used. In particular, the effect of the environment on the conductivity measurements, the lateral resolution in current images and the lateral propagation of the BD event will be analyzed in air, dry nitrogen (N(2)) and Ultra High Vacuum (UHV). (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1312 / 1315

页数：4

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