Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM

被引：10

作者：

Blasco, X ^{[1
]}

Nafría, M

Aymerich, X

Pétry, J

Vandervorst, W

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] IMEC, B-3001 Heverlee, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 12期

关键词：

conductive atomic force microscopy (CAFM); dielectric breakdown; gate dielectric; HfO2; high-k; reliability; SiO2;

D O I：

10.1109/TED.2005.859705

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An enhanced conductive atomic force microscope has enabled a measurement of the conduction through a HfO2/SiO2 gate stack until breakdown (BD) in a single measurement, with nanometer resolution. Before the stack BD, the current-voltage characteristic shows several conduction modes. After BD, switchings between different conduction states were observed, showing that BD is a reversible phenomenon.

引用

页码：2817 / 2819

页数：3

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