Reliability characteristics of high-k, dielectrics

被引：77

作者：

Kim, YH ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

来源：

MICROELECTRONICS RELIABILITY | 2004年 / 44卷 / 02期

关键词：

D O I：

10.1016/j.microrel.2003.10.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, recent results of Weibull slopes, area scaling factors, and breakdown behaviors observed for both soft breakdown and hard breakdown are discussed. These results would help to shed light on the breakdown mechanism of HfO2 gate dielectrics. The Weibull slope of the hard breakdown for both the area dependence and the time-to-dielectric-breakdown distribution was found to be beta = 2, whereas that of the soft breakdown was about 1.4 (EOT = Angstrom14). We also integrated the time-to-breakdown characteristics of HfO2 under unipolar AC voltage stress on MOS capacitors. The results show that longer lifetime of HfO2 has been observed when compared to constant voltage stress. Higher frequency and lower duty cycle in the AC stress resulted in longer lifetime. As thickness decreases, the amount of lifetime enhancement decreases. The enhancement of unipolar t(BD) is attributed to less charge trapping during the "on time", t(on) and charge detrapping during the off time, t(off). It is proposed that time (tau(in)) for charge to be trapped in HfO2 is longer than t(on) of unipolar stress under high frequency. In addition to experimental results, possible solutions are discussed. (C) 2003 Published by Elsevier Ltd.

引用

页码：183 / 193

页数：11

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