Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks

被引：12

作者：

Efthymiou, E.

Bernardini, S.

Volkos, S. N.

Hamilton, B.

Zhang, J. F.

Uppal, H. J.

Peaker, A. R. ^{[1
]}

机构：

[1] Univ Manchester, Ctr Elect Mat Devies & Nanostruct, Manchester M60 1QD, Lancs, England

[2] Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England

[3] CNR, INFM, MDM Natl Lab, I-20041 Milan, Italy

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 9-10期

基金：

英国工程与自然科学研究理事会;

关键词：

conductive atomic force microscope; dielectric breakdown; SiO2; oxide; SiO2/HfSixOy gate stack; leakage sites;

D O I：

10.1016/j.mee.2007.04.060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a conductive atomic force microscope (CAFM) has been used in order to detect and electrically characterize the evolution of dielectric degradation on thin (<5nm) SiO2 oxides and on SiO2/HfSixOy gate stacks on a nanometer scale. In SiO2 oxides we illustrate the evolution of the break down event, from the creation of individual leakage spots to their propagation to larger areas of high conductivity. We also report significant changes in apparent topography and current map after stress for both SiO2 and HfSixOy/SiO2 stacks. Post break down conduction for both dielectrics is modeled and discussed.

引用

页码：2290 / 2293

页数：4

共 9 条

[1]

Aguilera L, 2005, MICROELECTRON RELIAB, V45, P1390, DOI 10.1016/j.microrel.2005.07.015

[2] Breakdown spots of ultra-thin (EOT<1.5 nm) HfO2/SiO2 stacks observed with enhanced -: CAFM [J].