Electronic slowing down-induced dimensional changes in amorphous Fe85B15

Fe85B15 amorphous ribbons were irradiated at a temperature of 80 K with GeV Pb ions. In the considered electronic slowing down range ((dE/dx)(e) = 45 keV/nm), both resistivity variation and anisotropic growth are induced, Several samples with different tilt angles to the beam axis were irradiated at the same time which allowed us to derive information on both resistivity and dimensional variations from in situ resistance measurements. It is shown that (i) the growth starts with a non zero rate and (ii) an additional resistance variation occurs at high fluence, The growth features which are at variance with the previously reported behaviour of dimensional variations induced at lower electronic slowing down values are discussed at the light of a recent model. The influence of preirradiation and subsequent annealing on the growth rate is also considered.