Characterization and analysis of InGaN photovoltaic devices

被引：38

作者：

Jani, O ^{[1
]}

Honsberg, C ^{[1
]}

Asghar, A ^{[1
]}

Nicol, D ^{[1
]}

Ferguson, I ^{[1
]}

Doolittle, A ^{[1
]}

Kurtz, S ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488064

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by Xray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In0.07Ga0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.

引用

页码：37 / 42

页数：6

共 18 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[2]

Bandic ZZ, 1998, APPL PHYS LETT, V72, P3166, DOI 10.1063/1.121581

[3]

Bernardini F, 1999, PHYS STATUS SOLIDI B, V216, P391, DOI 10.1002/(SICI)1521-3951(199911)216:1<391::AID-PSSB391>3.0.CO

[4]

2-K

[5] Nonlinear macroscopic polarization in III-V nitride alloys [J].

Bernardini, F ;

Fiorentini, V .

PHYSICAL REVIEW B, 2001, 64 (08)

[6]

Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO

[7]

2-O

[8]

de Vos A., 1992, Endoreversible Thermodynamics of Solar Energy Conversion

[9] The rate of radiative recombination in the nitride semiconductors and alloys [J].

Dmitriev, A ;

Oruzheinikov, A .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (06) :3241-3246

[10] Electrical transport in p-GaN, n-InN and n-InGaN [J].

Geerts, W ;

Mackenzie, JD ;

Abernathy, CR ;

Pearton, SJ ;

Schmiedel, T .

SOLID-STATE ELECTRONICS, 1996, 39 (09) :1289-1294

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