Electrical transport in p-GaN, n-InN and n-InGaN

被引：19

作者：

Geerts, W ^{[1
]}

Mackenzie, JD ^{[1
]}

Abernathy, CR ^{[1
]}

Pearton, SJ ^{[1
]}

Schmiedel, T ^{[1
]}

机构：

[1] NATL HIGH MAGNET FIELD LAB, TALLAHASSEE, FL 32306 USA

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0038-1101(96)00047-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Variable temperature (1.7-400 K) and field (0-30 T) Hall measurements were employed to study carrier transport phenomena in p-type GaN (C) and n-type InN and InGaN. All three materials show metallic conduction which in the p-GaN is due to compensated carbon-related accepters and in the InN and InGaN due to intrinsic shallow donors. The InGaN shows a negative magnetoresistance over the complete investigated temperature range. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：1289 / 1294

页数：6

共 48 条

[1] ELECTRICAL AND STRUCTURAL-PROPERTIES OF INXGA1-XN ON GAAS
ABERNATHY, CR
MACKENZIE, JD
BHARATAN, SR
JONES, KS
PEARTON, SJ
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (13) : 1632 - 1634
[2] CCL4 DOPING OF GAN GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
ABERNATHY, CR
MACKENZIE, JD
PEARTON, SJ
HOBSON, WS
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (15) : 1969 - 1971
[3] BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355
[4] STRUCTURAL CHARACTERIZATION OF GAN AND GAASXN1-X GROWN BY ELECTRON-CYCLOTRON-RESONANCE METALORGANIC MOLECULAR-BEAM EPITAXY
BHARATAN, S
JONES, KS
ABERNATHY, CR
PEARTON, SJ
REN, F
WISK, PW
LOTHIAN, JR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1094 - 1098
[5] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS
CHANDRA, A
WOOD, CEC
WOODARD, DW
EASTMAN, LF
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 645 - 650
[6] ELECTRON MOBILITIES IN GALLIUM, INDIUM, AND ALUMINUM NITRIDES
CHIN, VWL
TANSLEY, TL
OSTOCHAN, T
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7365 - 7372
[7] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON
CONWELL, EM
[J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60
[8] DETERMINATION OF THE CONDUCTION-BAND ELECTRON EFFECTIVE-MASS IN HEXAGONAL GAN
DRECHSLER, M
HOFMANN, DM
MEYER, BK
DETCHPROHM, T
AMANO, H
AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9B): : L1178 - L1179
[9] EMELIANENKO OV, 1958, SOV PHYS-TECH PHYS, V3, P1094
[10] EMELYANENKO OV, 1968, SOV PHYS SEMICOND+, V1, P915

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