Conformal oxide coating of carbon nanotubes

被引：34

作者：

Kawasaki, S. ^{[1
]}

Catalan, G. ^{[1
]}

Fan, H. J. ^{[1
]}

Saad, M. M. ^{[2
]}

Gregg, J. M. ^{[2
]}

Correa-Duarte, M. A. ^{[3
]}

Rybczynski, J. ^{[4
]}

Morrison, F. D. ^{[5
]}

Tatsuta, T. ^{[6
]}

Tsuji, O. ^{[6
]}

Scott, J. F. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England

[2] Queens Univ Belfast, Dept Pure & Appl Phys, Belfast BT7 1NN, Antrim, North Ireland

[3] Univ Vigo, Dept Quim Fis, Vigo, Spain

[4] Boston Coll, Dept Phys, Chestnut Hill, MA 02167 USA

[5] Univ St Andrews, Sch Chem, St Andrews KY16 9ST, Fife, Scotland

[6] SAMCO Inc, Kyoto 6128443, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

THIN-FILMS; ARRAYS; FABRICATION; TEMPLATES;

D O I：

10.1063/1.2841710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The International Roadmap for Ferroelectric Memories requires three-dimensional integration of high-dielectric materials onto metal interconnects or bottom electrodes by 2010. Here, we demonstrate the possibility of conformally coating carbon nanotubes with high-dielectric oxide as a first step toward ultrahigh integration density of three-dimensional ferroelectric random access memories. (C) 2008 American Institute of Physics.

引用

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