New air-stable solution-processed organic n-type semiconductors based on sulfur-rich core-expanded naphthalene diimides

被引：40

作者：

Tan, Luxi ^{[1
]}

Guo, Yunlong ^{[1
]}

Zhang, Guanxin ^{[1
]}

Yang, Yang ^{[1
]}

Zhang, Deqing ^{[1
]}

Yu, Gui ^{[1
]}

Xu, Wei ^{[1
]}

Liu, Yunqi ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, CAS Key Labs Organ Solids, Inst Chem, Beijing 100190, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2011年 / 21卷 / 44期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; CHARGE-TRANSFER COMPLEXES; HIGH-ELECTRON-MOBILITY; HIGH-PERFORMANCE; COMPLEMENTARY CIRCUITS; REDOX PROPERTIES; TTF DERIVATIVES; CHANNEL; STABILITY;

D O I：

10.1039/c1jm13637b

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Among the reported organic n-type semiconductors naphthalene diimide (NDI) derivatives have received more and more attention. In this paper, we report two sulfur-rich expanded NDI derivatives 1 and 2 containing 1,3-dithiole-2-thione-4,5-dithiolate and 1,3-dithiole-2-one-4,5-dithiolate units, respectively. Electrochemical, absorption, spectral and theoretical calculation studies show that LUMO energies of 1 and 2 are lower than that of a typical NDI without functional substitution. OFET devices based on thin-films of 1 and 2 which can be easily solution-processed are fabricated with conventional techniques. The performance of OFET devices of 1 and 2 can be significantly improved by fast annealing (about 30 s) their thin-films in air, with high on/off ratios (10(6)-10(7)) and relatively high electron mobilities of up to 0.05 and 0.04 cm(2) V(-1) s(-1), respectively.

引用

页码：18042 / 18048

页数：7

共 66 条

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