Nitrogen implanted polysilicon resistor for high-voltage CMOS technology application

被引：5

作者：

Chen, CH

Fang, YK

Yang, CW

Wang, TW

Hsu, YL

Hsu, SL

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, VLSI Technol Lab, Tainan 70101, Taiwan

[2] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 11期

关键词：

hydrogen intrusion; nitrogen implantation; polysilicon; TCR; VCR;

D O I：

10.1109/55.962651

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nitrogen-implanted polysilicon thin film resistor has been proposed to improve the electrical characteristics of resistors in high-voltage CMOS technologies. The SIMS profile shows the proposed nitrogen-implanted polysilicon resistor can raise 100 times of the concentration of nitrogen. Thereby, the temperature coefficient of resistance (TCR), voltage coefficient of resistance (VCR), and mismatch are improved 20.4%, 35.9%, and 23.5% in average, respectively. The improvements are attributed to the suppression of both hydrogen intrusion by the presence of high-nitrogen concentration in polysilicon.

引用

页码：524 / 526

页数：3

共 6 条

[1]

HSU SL, 1996, Patent No. 5530418

[2] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].