Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces

被引：19

作者：

Goss, SH ^{[1
]}

Sun, XL

Young, AP

Brillson, LJ

Look, DC

Molnar, RJ

机构：

[1] Ohio State Univ, Dept Elect Engn, Columbus, OH 43210 USA

[2] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[3] MIT, Lincoln Labs, Lexington, MA 02420 USA

[4] Smith Lab, Dept Phys, Columbus, OH 43210 USA

[5] Smith Lab, Ctr Mat Res, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 23期

关键词：

D O I：

10.1063/1.1377858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used low-temperature cathodoluminescence spectroscopy (CLS) to probe the spatial distribution and energies of electronic defects near GaN/Al2O3 interfaces grown by hydride vapor phase epitaxy (HVPE). Cross sectional secondary electron microscopy CLS shows systematic variations in impurity/defect emissions over a wide range of HVPE GaN/Sapphire electronic properties. These data, along with electrochemical capacitance-voltage profiling and secondary ion mass spectrometry, provide a consistent picture of near-interface doping by O diffusion from Al2O3 into GaN, over a range 100-1000 nm. (C) 2001 American Institute of Physics.

引用

页码：3630 / 3632

页数：3

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