Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

被引：72

作者：

Look, DC ^{[1
]}

Stutz, CE

Molnar, RJ

Saarinen, K

Liliental-Weber, Z

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA

[3] MIT, Lincoln Lab, Lexington, MA 02173 USA

[4] Helsinki Univ Technol, Phys Lab, FIN-02015 Helsinki, Finland

[5] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 117卷 / 10期

关键词：

interfaces; epitaxy; dislocations;

D O I：

10.1016/S0038-1098(01)00010-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Lattice-mismatched epitaxy produces a high concentration of dislocations (N-dis) in the interface region, and this region is often highly conductive, due to donor (N-D) decoration of the dislocations. Here we show that a simple postulate, N-D = alpha (N-dis/c), where c is the lattice constant and alpha a constant of order 1-2, predicts a nearly constant low-temperature mobility, independent of N-dis This prediction is experimentally verified in GaN grown on Al2O3, and is also applied to other mismatched systems. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：571 / 575

页数：5

共 11 条

[1] ELECTRONIC-PROPERTIES OF VAPOR-GROWN HETEROEPITAXIAL ZNO FILM ON SAPPHIRE [J].

KASUGA, M ;

OGAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05) :794-798

[2] Defect donor and acceptor in GaN [J].

Look, DC ;

Reynolds, DC ;

Hemsky, JW ;

Sizelove, JR ;

Jones, RL ;

Molnar, RJ .

PHYSICAL REVIEW LETTERS, 1997, 79 (12) :2273-2276

[3] Dislocation scattering in GaN [J].

Look, DC ;

Sizelove, JR .

PHYSICAL REVIEW LETTERS, 1999, 82 (06) :1237-1240

[4]

MOLNAR RJ, 1995, MATER RES SOC SYMP P, V378, P479, DOI 10.1557/PROC-378-479

[5] The role of dislocation scattering in n-type GaN films [J].

Ng, HM ;

Doppalapudi, D ;

Moustakas, TD ;

Weimann, NG ;

Eastman, LF .

APPLIED PHYSICS LETTERS, 1998, 73 (06) :821-823

[6]

ORTON JW, 1999, GAN RELATED SEMICOND, P294

[7] Observation of native Ga vacancies in GaN by positron annihilation [J].

Saarinen, K ;

Laine, T ;

Kuisma, S ;

Nissila, J ;

Hautojarvi, P ;

Dobrzynski, L ;

Baranowski, JM ;

Pakula, K ;

Stepniewski, R ;

Wojdak, M ;

Wysmolek, A ;

Suski, T ;

Leszczynski, M ;

Grzegory, I ;

Porowski, S .

PHYSICAL REVIEW LETTERS, 1997, 79 (16) :3030-3033

[8] Photoelectrochemical capacitance-voltage measurements in GaN [J].

Stutz, CE ;

Mack, M ;

Bremser, MD ;

Nam, OH ;

Davis, RF ;

Look, DC .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (05) :L26-L28

[9]

Yakimov EB, 1997, J PHYS III, V7, P2293, DOI 10.1051/jp3:1997102

[10]

Yamamoto A, 1999, PHYS STATUS SOLIDI A, V176, P689, DOI 10.1002/(SICI)1521-396X(199911)176:1<689::AID-PSSA689>3.0.CO

← 1 2 →