Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures

被引：18

作者：

Pokatilov, EP

Fomin, VM

Balaban, SN

Gladilin, VN

Klimin, SN

Devreese, JT

Magnus, W

Schoenmaker, W

Collaert, N

Van Rossum, M

De Meyer, K

机构：

[1] Univ Stat din Moldova, Dept Fiz Teoret, MD-2009 Chisinau, Moldova

[2] Univ Instelling Antwerp, B-2610 Wilrijk, Belgium

[3] IMEC, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Nat Kunde, B-3001 Louvain, Belgium

[5] Katholieke Univ Leuven, ESAT, Dept Elektrotech, B-3001 Louvain, Belgium

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 09期

关键词：

D O I：

10.1063/1.370171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A quantum-mechanical description of charge carriers is presented for nanoscaled cylindrical metal-oxide-semiconductor structures. The Schrodinger and Poisson equations are solved self-consistently within the framework of the Hartree approximation and the profiles of the electrostatic field and the charge carrier densities are obtained. (C) 1999 American Institute of Physics. [S0021-8979(99)10109-9].

引用

页码：6625 / 6631

页数：7

共 16 条

[1]

Abramowitz M., 1964, HDB MATH FUNCTIONS

[2] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[3] STEADY-STATE AND TRANSIENT ANALYSIS OF SUBMICRON DEVICES USING ENERGY-BALANCE AND SIMPLIFIED HYDRODYNAMIC MODELS [J].

APANOVICH, Y ;

LYUMKIS, E ;

POLSKY, B ;

SHUR, A ;

BLAKEY, P .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1994, 13 (06) :702-711

[4] QUANTIZED CONDUCTANCE IN ATOM-SIZED WIRES BETWEEN 2 METALS [J].

BRANDBYGE, M ;

SCHIOTZ, J ;

SORENSEN, MR ;

STOLTZE, P ;

JACOBSEN, KW ;

NORSKOV, JK ;

OLESEN, L ;

LAEGSGAARD, E ;

STENSGAARD, I ;

BESENBACHER, F .

PHYSICAL REVIEW B, 1995, 52 (11) :8499-8514

[5]

COLLAERT N, 1998, P SISPAD 98, P235

[6] NONLINEAR-OPTICAL ABSORPTION OF GAAS QUANTUM WIRES [J].

DNEPROVSKII, V ;

GUSHINA, N ;

PAVLOV, O ;

POBORCHII, V ;

SALAMATINA, I ;

ZHUKOV, E .

PHYSICS LETTERS A, 1995, 204 (01) :59-62

[7] HOMOEPITAXIAL GROWTH INVESTIGATED BY HIGH-RESOLUTION HE ATOM SCATTERING - NACL ONTO NACL(001) [J].

DUAN, J ;

BISHOP, GG ;

GILLMAN, ES ;

CHERN, G ;

SAFRON, SA ;

SKOFRONICK, JG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :1999-2005

[8]

Fistul V.I., 1995, Heavily Doped Semiconductors

[9] Structural transitions in sodium chloride nanocrystals [J].

Hudgins, RR ;

Dugourd, P ;

Tenenbaum, JM ;

Jarrold, MF .

PHYSICAL REVIEW LETTERS, 1997, 78 (22) :4213-4216

[10]

MILNES AG, 1973, DEEP IMPURITIES SEMI

← 1 2 →