Visible-blind ultra-violet detector based on n-ZnO/p-Si heterojunction fabricated by plasma-assisted pulsed laser deposition

被引：17

作者：

Gu, Y. F.

Li, X. M.

Zhao, J. L.

Yu, W. D.

Gao, X. D.

Yang, C.

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2007年 / 143卷 / 8-9期

关键词：

heterojunction; laser processin; impurities in semiconductors; photoconductivity and photovoltaics;

D O I：

10.1016/j.ssc.2007.06.014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The n-Zn/p-Si heterostructure detector for ultra-violet was fabricated by pulsed laser deposition. Plasma oxygen was used for the deposition n-ZnO thin films to decrease the concentration of deep-level defects such as oxygen vacancies and zinc interstitials. The electron concentration n-ZnO thin film was reduced to a low level of 1014 cm(-3), resulting in the depletion width in p-Si decreasing significantly. The spectral of the detector shows that the responsivity to visible light has been eliminated effectively by using plasma oxygen in the ZnO film growth. visible-blind mechanism for the n-Zn/p-Si heterostructure detector has been discussed. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：421 / 424

页数：4

共 24 条

[1] Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy -: art. no. 241108 [J].

Alivov, YI ;

Özgür, Ü ;

Dogan, S ;

Johnstone, D ;

Avrutin, V ;

Onojima, N ;

Liu, C ;

Xie, J ;

Fan, Q ;

Morkoç, H .

APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3

[2] A comparison of plasma-activated N2/O2 and N2O/O2 mixtures for use in ZnO:N synthesis by chemical vapor deposition [J].

Barnes, TM ;

Leaf, J ;

Hand, S ;

Fry, C ;

Wolden, CA .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (12) :7036-7044

[3] Photoconductive UV detectors on sol-gel-synthesized ZnO films [J].

Basak, D ;

Amin, G ;

Mallik, B ;

Paul, GK ;

Sen, SK .

JOURNAL OF CRYSTAL GROWTH, 2003, 256 (1-2) :73-77

[4] Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements [J].

Chen, ZQ ;

Yamamoto, S ;

Maekawa, M ;

Kawasuso, A ;

Yuan, XL ;

Sekiguchi, T .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) :4807-4812

[5] Study on synthesis and blue emission mechanism of ZnO tetrapodlike nanostructures [J].

Cheng, Wende ;

Wu, Ping ;

Zou, Xingquan ;

Xiao, Tan .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (05)

[6] Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes [J].

Choi, YS ;

Lee, JY ;

Im, S ;

Lee, SJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06) :2384-2387

[7] Stable p-ZnO thin films by oxygen control using reverse spray dynamics [J].

Hazra, SK ;

Basu, S .

SOLID STATE COMMUNICATIONS, 2005, 133 (04) :245-248

[8] Effects of AlOx-cap layer on the luminescence and photoconductivity of ZnO thin films -: art. no. 152116 [J].

Hui, KC ;

Ong, HC ;

Lee, PF ;

Dai, JY .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

[9] p-ZnO/n-GaN heterostructure ZnO light-emitting diodes -: art. no. 222101 [J].

Hwang, DK ;

Kang, SH ;

Lim, JH ;

Yang, EJ ;

Oh, JY ;

Yang, JH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3

[10]

JEONG IS, 2003, APPL PHYS LETT, V83, P55431

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