Femtosecond ultraviolet (248 nm) excimer laser processing of Teflon (PTFE)

被引:30
作者
Adhi, KP
Owings, RL
Railkar, TA [1 ]
Brown, WD
Malshe, AP
机构
[1] Univ Arkansas, Dept Mech Engn, Fayetteville, AR 72701 USA
[2] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
基金
美国国家科学基金会;
关键词
ultra-fast laser; excimer laser; laser material processing; PTFE;
D O I
10.1016/S0169-4332(03)00586-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have investigated by X-ray photoelectron spectroscopy (XPS) the surface of poly (tetrafluoroethylene) (PTFE) films, which were subjected to processing by femtosecond (fs) UV radiation from an excimer laser (KrF: lambda = 248 nm, t(p) similar to 380 fs) in air. Bulk characterization of processed PTFE films by Fourier transform infrared spectroscopy (FTIR) permit an investigation of the laser induced modifications in the material at energy densities below the ablation threshold. No features in XPS and FTIR spectra indicated the incorporation of hydrogen and/or oxygen, or the formation of a cross-linked network of carbon indicating chemically clean processing in contrast to nanosecond excimer laser processing which chemically degrades the surface. Scanning electron microscopy (SEM) of the micrometer size vertical interconnect (microvia) indicated mechanically and thermally damage free processing of PTFE with good edge quality, in contrast to nanosecond excimer laser processing. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:17 / 23
页数:7
相关论文
共 16 条
[1]   DEPOSITION OF POLYTETRAFLUOROETHYLENE FILMS BY LASER ABLATION [J].
BLANCHET, GB ;
SHAH, SI .
APPLIED PHYSICS LETTERS, 1993, 62 (09) :1026-1028
[2]   POLYMER SURFACE REACTIVITY ENHANCEMENT BY ULTRAVIOLET ARF LASER IRRADIATION - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF POLYTETRAFLUOROETHYLENE AND POLYETHYLENETEREPHTHALATE ULTRAVIOLET TREATED SURFACES [J].
CHTAIB, M ;
ROBERFROID, EM ;
NOVIS, Y ;
PIREAUX, JJ ;
CAUDANO, R ;
LUTGEN, P ;
FEYDER, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (06) :3233-3237
[3]   EVALUATION AND CHARACTERIZATION OF CHEMICALLY MODIFIED POLYMERS AS SECONDARY-ELECTRON EMITTERS [J].
DAKE, SB ;
RAJOPADHYE, NR ;
BHORASKAR, SV .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1987, 20 (12) :1631-1636
[4]   HEAT-TRANSFER AND MATERIAL REMOVAL IN PULSED EXCIMER-LASER-INDUCED ABLATION - PULSEWIDTH DEPENDENCE [J].
DCOUTO, GC ;
BABU, SV .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) :3052-3058
[5]  
Ferry L, 1998, J POLYM SCI POL PHYS, V36, P2057, DOI 10.1002/(SICI)1099-0488(19980915)36:12<2057::AID-POLB5>3.0.CO
[6]  
2-U
[7]   Formation of polytetrafluoroethylene thin films by using CO2 laser evaporation and XeCl laser ablation [J].
Inayoshi, M ;
Hori, M ;
Goto, T ;
Hiramatsu, M ;
Nawata, M ;
Hattori, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (04) :1981-1985
[8]   STUDY OF LOCALIZED STATES IN FEP BY SPACE-CHARGE LIMITED CURRENT MEASUREMENTS [J].
JOG, JP ;
WALZADE, SJ ;
BHORASKAR, SV .
POLYMER, 1982, 23 (11) :1622-1626
[9]   ABLATION OF POLYMER-FILMS BY A FEMTOSECOND HIGH-PEAK-POWER TI SAPPHIRE LASER AT 798-NM [J].
KUMAGAI, H ;
MIDORIKAWA, K ;
TOYODA, K ;
NAKAMURA, S ;
OKAMOTO, T ;
OBARA, M .
APPLIED PHYSICS LETTERS, 1994, 65 (14) :1850-1852
[10]   THRESHOLD BEHAVIOR IN POLYIMIDE PHOTOABLATION - SINGLE-SHOT RATE MEASUREMENTS AND SURFACE-TEMPERATURE MODELING [J].
KUPER, S ;
BRANNON, J ;
BRANNON, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (01) :43-50