Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response

被引：144

作者：

Chen, Songyue ^{[1
]}

Bomer, Johan G. ^{[1
]}

Carlen, Edwin T. ^{[1
]}

van den Berg, Albert ^{[1
]}

机构：

[1] Univ Twente, BIOS Lab, Chip Grp, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

NANO LETTERS | 2011年 / 11卷 / 06期

关键词：

Silicon nanowire; ion sensitive field effect transistor; pH sensor; site-binding model; SILICON NANOWIRES; DOUBLE-LAYER; THIN-FILMS; PH-ISFET; INTERFACE; SENSORS; ARRAYS; ADSORPTION; TRANSISTOR; AL2O3;

D O I：

10.1021/nl200623n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanoscale ISFET (ion sensitive field-effect transistor) pH sensors are presented that produce the well-known sub-Nernstian pH-response for silicon dioxide (SiO2) surfaces and near ideal Nernstian sensitivity for alumina (Al2O3) surfaces. Titration experiments of SiO2 surfaces resulted in a varying pH sensitivity similar to 20 mV/pH for pH near 2 and >45 mV/pH for pH > 5. Measured pH responses from titrations of thin (15 nm) atomic layer deposited (ALD) alumina (Al2O3) surfaces on the nanoISFETs resulted in near ideal Nemstian pH sensitivity of 57.8 +/- 1.2 mV/pH (pH range: 2-10; T = 22 degrees C) and temperature sensitivity of 0.19 mV/pH degrees C (22 degrees C <= T <= 40 degrees C). A comprehensive analytical model of the nanoISFET sensor, which is based on the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) model, accompanies the experimental results and an extracted Delta pK approximate to 1.5 from the measured responses further supports the near ideal Nernstian pH sensitivity.

引用

页码：2334 / 2341

页数：8

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