Characterization of p-AgGa0.25In0.75Se2/n-Zn0.35Cd0.65S polycrystalline thin film heterojunctions

被引：12

作者：

Chandra, GH ^{[1
]}

Hussain, OM ^{[1
]}

Uthanna, S ^{[1
]}

Naidu, BS ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Pradesh, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 86卷 / 01期

关键词：

solar cells; I-III-VI2; compounds; semiconductors; electrical properties and measurements; optical properties;

D O I：

10.1016/S0921-5107(01)00663-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline thin film p-AgGa0.25In0.75Se2/n-Zn0.35Cd0.65S heterojunctions were fabricated and the current density-voltage, capacitance-voltage and spectral response characteristics of the junctions were studied. The heterojunction was illuminated in the back-wall configuration and an open-circuit voltage of 490 mV, a short-circuit current density of 27 mA cm(-2) and an electrical conversion efficiency of 7.8% have been obtained for a cell with an active area of I cm(2) under a solar input of 100 mW cm(-2) (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：60 / 63

页数：4

共 18 条

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Hussain, OM ;

Uthanna, S ;

Naidu, BS .

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[3] Characteristics of Al/p-AgGa0.25In0.75Se2 polycrystalline thin film Schottky barrier diodes [J].

Chandra, GH ;

Hussain, OM ;

Uthanna, S ;

Naidu, BS .

PHYSICA SCRIPTA, 2001, 63 (05) :422-424

[4] Optical absorption studies on AgGa0.25In0.75Se2 polycrystalline films [J].

Chandra, GH ;

Hussain, OM ;

Uthanna, S ;

Naidu, BS .

JOURNAL OF MATERIALS SCIENCE LETTERS, 2001, 20 (01) :63-65

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