Low-pressure CMP for reliable porous low-k/Cu integration

被引：30

作者：

Kondo, S ^{[1
]}

Tokitoh, S ^{[1
]}

Yoon, BU ^{[1
]}

Namiki, A ^{[1
]}

Sone, A ^{[1
]}

Ohashi, N ^{[1
]}

Misawa, K ^{[1
]}

Sone, S ^{[1
]}

Shin, HJ ^{[1
]}

Yoshie, T ^{[1
]}

Yoneda, K ^{[1
]}

Shimada, M ^{[1
]}

Ogawa, S ^{[1
]}

Matsumoto, I ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2003年

关键词：

D O I：

10.1109/IITC.2003.1219720

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We developed a method of low-pressure CMP for the Cu damascene process on 3.00-mm wafers in order to prevent porous low-k film from being damaged. A new failure criterion, the time to CMP-induced delamination, was defined and found to be strongly dependent on the Young's modulus of the low-k film. In order to integrate porous low-k films into Cu damascene interconnects (k<2.5), a modulus of more than 8 GPa is required to suppress CMP-induced damage. He-plasma treatment before cap-CVD film deposition was also effective to improve low-k film adhesion. Because the time to delamination is inversely proportional to the polishing pressure, a high-removal-rate process is important even in low-pressure CMP. With a goal of integrating low-k materials (k<2.0) we investigated the feasibility of ultra-low pressure CMP (at 0.8 psi).

引用

页码：86 / 88

页数：3

共 2 条

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Sakuma, N ;

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Yamaguchi, H ;

Owada, N .

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2000, :253-255

[2] Low-k dielectrics characterization for Damascene integration [J].

Lin, S ;

Jin, CM ;

Lui, L ;

Tsai, MS ;

Daniels, M ;

Gonzalez, A ;

Wetzel, JT ;

Monnig, KA ;

Winebarger, PA ;

Jang, S ;

Yu, D ;

Liang, MS .

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :146-148

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