Dynamics of recombination-enhanced defect reaction in a ZnCdSe single quantum well

Room temperature photoluminescence spectra from a ZnCdSe single quantum well have been measured as a function of time in a minute time scale under several photoexcitation levels (4-40 W/cm(2)). Spectrally integrated photoluminescence intensity increases as the measurement time increases and reaches a maximum level that is 37 times higher than the initial intensity. We attribute this dynamical behavior to recombination-enhanced defect reactions in the vicinities of point defects. These reactions reduce the density of point defects and enhance radiation quantum efficiency. A new point defect reduction rate was discovered to fit our experimental data. (C) 1998 American Institute of Physics.