Diffusion of nitrogen from a buried doping layer in gallium arsenide revealing the prominent role of as interstitials

被引：44

作者：

Bosker, G ^{[1
]}

Stolwijk, NA

Thordson, JV

Sodervall, U

Andersson, TG

机构：

[1] Univ Munster, Inst Met Forsch, D-48149 Munster, Germany

[2] Chalmers Univ Technol, Dept Phys & Engn Phys, Div Microelect & Nanosci, S-41296 Gothenburg, Sweden

[3] Univ Gothenburg, S-41296 Gothenburg, Sweden

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.81.3443

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first measurements of N diffusion in GaAs. GaAs films with a buried N doping layer were grown by molecular beam epitaxy and diffusion annealed between 808 and 880 degrees C in As-rich ambient. Nitrogen distributions determined by secondary ion mass spectroscopy reveal a marked non-Gaussian broadening of the as-grown peak. Computer modeling yields strong evidence for the kick-out diffusion mechanism involving interstitial (N-i) substitutional (N-s) exchange assisted by As interstitials (I-As) This allows us to deduce the I-As-related diffusion coefficient of As in GaAs. Comparison with existing As tracer diffusivities points to a substantial contribution of I-As to As diffusion in GaAs. [S0031-9007(98)07428-6].

引用

页码：3443 / 3446

页数：4

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