Issues concerning the preparation of ohmic contacts to n-GaN

被引：18

作者：

Pelto, CM ^{[1
]}

Chang, YA

Chen, Y

Williams, RS

机构：

[1] Univ Wisconsin, Mat Sci Program, Madison, WI 53706 USA

[2] Hewlett Packard Labs, Quantum Sci Res, Palo Alto, CA 94304 USA

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 09期

基金：

美国国家科学基金会;

关键词：

ohmic contacts; GaN; titanium; aluminum; processing; transmission line models; oxidation; annealing; electrical characteristics; NiAl;

D O I：

10.1016/S0038-1101(01)00163-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several processing parameters for Ti/Al ohmic contacts to n-GaN have been considered in this study. Ti/Al contacts are widely used as low resistance contacts in GaN-based electronic and photonic devices, but the processing issues of these contacts are not thoroughly understood to allow proper standardization. In this study, we have looked at the effects of different Ti:Al layer thickness ratios, oxidizing atmospheres, wet surface cleaning procedures, and deposition techniques on the Ti/Al contact structure's performance. A parallel processing study of Ti/Al contacts with more novel contacts is suggested as a means of controlling the many inherent variables that are shown to affect contact performance. We have used this parallel processing method to quantify the performance of a novel NiAl contact to nGaN. (C) 2001 Published by Elsevier Science Ltd.

引用

页码：1597 / 1605

页数：9

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