The dc characteristics of a silicon-on-insulator metal-semiconductor field effect transistor

The do characteristics of SOI MESFETs have been investigated considering the energy distribution of interface states, fixed charges in the insulating layer and the effect of back gate bias. It is shown that the depletion layer arising at the insulator-channel interface due to interface states and fixed charges, plays a vital role in fixing the device characteristics. In particular, the role of the above non-idealities on the drain current, pinch-off and threshold voltage of the device has been investigated. It has been found that, when a back gate bias is applied, the depletion layer width at the insulator-channel interface shrinks and the device regains its normal properties overcoming the effects caused by interface states and fixed charges.