MODELING FOR FLOATING BODY EFFECTS IN FULLY DEPLETED SOI MOSFETS

被引：14

作者：

CHEN, HTH ^{[1
]}

HUANG, RS ^{[1
]}

机构：

[1] UNIV NEW S WALES,SCH ELECT ENGN & COMP SCI,KENSINGTON,NSW 2033,AUSTRALIA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 03期

关键词：

D O I：

10.1109/16.199364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new model based on SOI MOSFET and BJT device theories is developed to describe the current kink and breakdown phenomena in thin-film SOI MOSFET drain-source current-voltage characteristics operated in strong inversion. The modulation of MOSFET current by raised floating body potential is discussed to provide an insight for understanding the suppression of current kink in fully depleted thin-film SOI devices. The proposed analytical model successfully simulates the drain current-voltage characteristics of thin-film SOI n-MOSFET's fabricated on SIMOX wafers.

引用

页码：583 / 590

页数：8

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