SUPPRESSION OF PARASITIC BIPOLAR EFFECTS IN THIN-FILM SOI TRANSISTORS

被引：5

作者：

ARMSTRONG, GA

FRENCH, WD

机构：

[1] Department of Electrical and Electronic Engineering, Queen's University

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1109/55.145019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To accurately predict the bipolar holding voltage in thin-film silicon-on-insulator (SOI) transistors, it is essential to model correctly both bandgap narrowing in the heavily doped source region and impact ionization in the drain region. Improved models for both mechanisms have been incorporated in a two-dimensional device simulator and carefully validated by comparison with measurements. It is shown that increases in film doping can be utilized with an optimized LDD to maximize the bipolar holding voltage.

引用

页码：198 / 200

页数：3

共 11 条

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