AN IMPACT IONIZATION MODEL FOR 2-DIMENSIONAL DEVICE SIMULATION

被引：21

作者：

THURGATE, T ^{[1
]}

CHAN, N ^{[1
]}

机构：

[1] TECHNOL MODELING ASSOCIATES INC,MENLO PK,CA 94025

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：400 / 404

页数：5

共 10 条

[1] MAXIMUM ANISOTROPY APPROXIMATION FOR CALCULATING ELECTRON DISTRIBUTIONS - APPLICATION TO HIGH FIELD TRANSPORT IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1964, 133 (1A) :A26-A33

[2]

ESTREICH DB, 1980, G2019 STANF U STANF

[3]

HSU FC, 1982, IEEE T ELECTRON DEV, V29, P1735

[4] 2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

MOCK, MS .

SOLID-STATE ELECTRONICS, 1973, 16 (05) :601-609

[5] A TWO-DIMENSIONAL MODEL OF THE AVALANCHE EFFECT IN MOS-TRANSISTORS [J].

SCHUTZ, A ;

SELBERHERR, S ;

POTZL, HW .

SOLID-STATE ELECTRONICS, 1982, 25 (03) :177-183

[6] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+

[7] AN EMPIRICAL-MODEL FOR DEVICE DEGRADATION DUE TO HOT-CARRIER INJECTION [J].

TAKEDA, E ;

SUZUKI, N .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :111-113

[8] NUMERICAL-MODEL OF AVALANCHE BREAKDOWN IN MOSFETS [J].

TOYABE, T ;

YAMAGUCHI, K ;

ASAI, S ;

MOCK, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (07) :825-832

[9] NUMERICAL-SIMULATION OF HOT-ELECTRON PHENOMENA [J].

WATANABE, DS ;

SLAMET, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) :1042-1049

[10] THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].

WOLFF, PA .

PHYSICAL REVIEW, 1954, 95 (06) :1415-1420

← 1 →