NUMERICAL-SIMULATION OF HOT-ELECTRON PHENOMENA

被引：14

作者：

WATANABE, DS

SLAMET, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 09期

关键词：

D O I：

10.1109/T-ED.1983.21258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1042 / 1049

页数：8

共 13 条

[1]

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[3] SURFACE CONDUCTION IN SHORT-CHANNEL MOS DEVICES AS A LIMITATION TO VLSI SCALING [J].

EITAN, B ;

FROHMANBENTCHKOWSKY, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :254-266

[4]

Forsythe G. E., 1977, COMPUTER METHODS MAT, P102

[5] A NUMERICAL-ANALYSIS OF AVALANCHE BREAKDOWN IN SHORT-CHANNEL MOSFETS [J].

KOTANI, N ;

KAWAZU, S .

SOLID-STATE ELECTRONICS, 1981, 24 (07) :681-687

[6]

NAKAGOME Y, 1982, ICSSD, P63

[7] DOUBLE-DRIFT IMPATT DIODES NEAR 100-GHZ [J].

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IGLESIAS, DE .

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[8]

PHILLIPS A, 1975, IEDM TECH DIG, P39

[9]

Schutz A., 1982, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, VCAD-1, P77, DOI 10.1109/TCAD.1982.1269997

[10] A TWO-DIMENSIONAL MODEL OF THE AVALANCHE EFFECT IN MOS-TRANSISTORS [J].

SCHUTZ, A ;

SELBERHERR, S ;

POTZL, HW .

SOLID-STATE ELECTRONICS, 1982, 25 (03) :177-183

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