A NUMERICAL-ANALYSIS OF AVALANCHE BREAKDOWN IN SHORT-CHANNEL MOSFETS

被引:5
作者
KOTANI, N
KAWAZU, S
机构
关键词
D O I
10.1016/0038-1101(81)90199-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:681 / 687
页数:7
相关论文
共 24 条
[1]   DISTRIBUTION OF MOBILE CARRIERS IN PINCH-OFF REGION OF AN INSULATED-GATE FIELD-EFFECT TRANSISTOR AND ITS INFLUENCE ON DEVICE BREAKDOWN [J].
ARMSTRONG, GA ;
MAGOWAN, JA .
SOLID-STATE ELECTRONICS, 1971, 14 (08) :723-+
[2]  
BARRON MB, 1969, 55011 STANF EL LAB R
[3]   DRAIN VOLTAGE LIMITATIONS OF MOS-TRANSISTORS [J].
BATEMAN, IM ;
ARMSTRONG, GA ;
MAGOWAN, JA .
SOLID-STATE ELECTRONICS, 1974, 17 (06) :539-550
[4]   UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS [J].
CHYNOWETH, AG .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) :1161-1165
[5]  
COLAK S, 1980, SOLID ST ELECTRON, V23, P473
[6]   THRESHOLD VOLTAGE FROM NUMERICAL SOLUTION OF 2-DIMENSIONAL MOS-TRANSISTOR [J].
DELAMONEDA, FH .
IEEE TRANSACTIONS ON CIRCUIT THEORY, 1973, CT20 (06) :666-673
[7]  
HORI R, 1975, 7TH P C SOL ST DEV T, P193
[8]  
KASAI R, 1979, T I ELECTRON COMMUN, P389
[9]  
KOTANI N, 1979, SOLID ST ELECTRON, V23, P63
[10]   AVALANCHE BREAKDOWN IN SILICON [J].
MCKAY, KG .
PHYSICAL REVIEW, 1954, 94 (04) :877-884