A TWO-DIMENSIONAL MODEL OF THE AVALANCHE EFFECT IN MOS-TRANSISTORS

被引：49

作者：

SCHUTZ, A ^{[1
]}

SELBERHERR, S ^{[1
]}

POTZL, HW ^{[1
]}

机构：

[1] LUDWIG BOLTZMANN INST FESTKORPERPHYS,VIENNA,AUSTRIA

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 03期

关键词：

D O I：

10.1016/0038-1101(82)90105-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：177 / 183

页数：7

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