CHARACTERIZATION OF BIPOLAR SNAPBACK AND BREAKDOWN VOLTAGE IN THIN-FILM SOI TRANSISTORS BY 2-DIMENSIONAL SIMULATION

被引：24

作者：

ARMSTRONG, GA ^{[1
]}

DAVIS, JR ^{[1
]}

DOYLE, A ^{[1
]}

机构：

[1] BRITISH TELECOMMUN PLC,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 02期

关键词：

D O I：

10.1109/16.69914

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-dimensional finite-difference simulator for SOI MOSFET's is presented. The simulator has been derived from MINIMOS4 and incorporates additional features which permit the characterization of the bipolar snapback effect which has been observed as a limiting feature in ultra-thin-film transistors. The snapback effect is illustrated as a hysteresis mechanism whereby, for a given bias condition, there are two different solutions to the semiconductor equations, dependent on the starting condition. Examples of the applications of the simulator to predict breakdown voltage in submicrometer devices are considered. Excellent agreement with measured values of breakdown voltage has been achieved for submicrometer n-channel transistors, both with and without the use of lightly doped drains.

引用

页码：328 / 336

页数：9

共 32 条

[1]

ARMSTRONG GA, 1987, P NASECODE, V5, P115

[2]

ARMSTRONG GA, 1989, P IEEE SOS SOI TECHN, P44

[3]

AUBERTONHERVE AJ, 1988, P IEEE SOS SOI TECHN, P55

[4] SINGLE-TRANSISTOR LATCH IN SOI MOSFETS [J].

CHEN, CED ;

MATLOUBIAN, M ;

SUNDARESAN, R ;

MAO, BY ;

WEI, CC ;

POLLACK, GP .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) :636-638

[5] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J].

COLINGE, JP .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) :244-246

[6] SOME PROPERTIES OF THIN-FILM SOI MOSFETS [J].

COLINGE, JP .

IEEE CIRCUITS AND DEVICES MAGAZINE, 1987, 3 (06) :16-20

[7] REDUCTION OF FLOATING SUBSTRATE EFFECT IN THIN-FILM SOI MOSFETS [J].

COLINGE, JP .

ELECTRONICS LETTERS, 1986, 22 (04) :187-188

[8] IMPROVED SUBTHRESHOLD CHARACTERISTICS OF N-CHANNEL SOI TRANSISTORS [J].

DAVIS, JR ;

GLACCUM, AE ;

REESON, K ;

HEMMENT, PLF .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :570-572

[9] ANOMALOUS SUBTHRESHOLD CURRENT VOLTAGE CHARACTERISTICS OF N-CHANNEL SOI MOSFETS [J].

FOSSUM, JG ;

SUNDARESAN, R ;

MATLOUBIAN, M .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) :544-546

[10] MINIMOS-3 - A MOSFET SIMULATOR THAT INCLUDES ENERGY-BALANCE [J].

HANSCH, W ;

SELBERHERR, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) :1074-1078

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