Hole-injection barrier in pentacene field-effect transistor with Au electrodes modified by C16H33SH

被引：26

作者：

Kawasaki, Naoko ^{[1
]}

Ohta, Yohei

Kubozono, Yoshihiro

Fujiwara, Akihiko

机构：

[1] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan

[2] Japan Adv Inst Sci & Technol, Ishikawa 9231292, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 12期

关键词：

D O I：

10.1063/1.2789699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field-effect transistor with thin films of pentacene has been fabricated with Au electrodes modified by 1-hexadecanethiol (C16H33SH), and the hole-injection barriers have been determined from the temperature dependence of output properties on the basis of the thermionic emission model for double Schottky barriers. The large tunneling barriers are formed by the insulating C16H33SH at the interfaces between the Au electrodes and pentacene thin films. (c) 2007 American Institute of Physics.

引用

页数：3

共 10 条

[1] Interface dipoles arising from self-assembled monolayers on gold: UV-photoemission studies of alkanethiols and partially fluorinated alkanethiols [J].

Alloway, DM ;

Hofmann, M ;

Smith, DL ;

Gruhn, NE ;

Graham, AL ;

Colorado, R ;

Wysocki, VH ;

Lee, TR ;

Lee, PA ;

Armstrong, NR .

JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (42) :11690-11699

[2] Analysis of transient phenomena of C60 field effect transistors [J].

Miyadera, Tetsuhiko ;

Nakayama, Manabu ;

Saiki, Koichiro .

APPLIED PHYSICS LETTERS, 2006, 89 (17)

[3] Output properties of C60 field-effect transistors with au electrodes modified by 1-alkanethiols [J].

Nagano, Takayuki ;

Tsutsui, Michiko ;

Nouchi, Ryo ;

Kawasaki, Naoko ;

Ohta, Yohei ;

Kubozono, Yoshihiro ;

Takahashi, Nobuya ;

Fujiwara, Akihiko .

JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (19) :7211-7217

[4]

NAKAMURA M, 2007, UNPUB IMR S TOH U, P10

[5] Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification [J].

Nishikawa, T ;

Kobayashi, S ;

Nakanowatari, T ;

Mitani, T ;

Shimoda, T ;

Kubozono, Y ;

Yamamoto, G ;

Ishii, H ;

Niwano, M ;

Iwasa, Y .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)

[6] Output properties of C60 field-effect transistor device with Eu source/drain electrodes [J].

Ochi, Kenji ;

Nagano, Takayuki ;

Ohta, Toshio ;

Nouchi, Ryo ;

Kubozono, Yoshihiro ;

Matsuoka, Yukitaka ;

Shikoh, Eiji ;

Fujiwara, Akihiko .

APPLIED PHYSICS LETTERS, 2006, 89 (08)

[7]

OHTA Y, UNPUB

[8] DOMAIN-STRUCTURE OF SELF-ASSEMBLED ALKANETHIOL MONOLAYERS ON GOLD [J].

SCHONENBERGER, C ;

JORRITSMA, J ;

SONDAGHUETHORST, JAM ;

FOKKINK, LGJ .

JOURNAL OF PHYSICAL CHEMISTRY, 1995, 99 (10) :3259-3271

[9] Organic metal electrodes for controlled p- and n-type carrier injections in organic field-effect transistors [J].

Takahashi, Y ;

Hasegawa, T ;

Abe, Y ;

Tokura, Y ;

Saito, G .

APPLIED PHYSICS LETTERS, 2006, 88 (07)

[10] Ambipolar pentacene field-effect transistors with calcium source-drain electrodes [J].

Yasuda, T ;

Goto, T ;

Fujita, K ;

Tsutsui, T .

APPLIED PHYSICS LETTERS, 2004, 85 (11) :2098-2100

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