Structure of Co deposited 6H-SiC(0001)

Clean 6H-SiC(0 0 0 1)-(3 x 3) surfaces were deposited with 0.25-3.5 angstrom Co at room temperature and subsequently annealed to 950 degrees C. The structure, chemistry and morphology of Co deposited SiC surfaces were investigated using low energy electron diffraction, X-ray photoelectron spectroscopy, scanning tunneling microscopy.. and atomic force microscopy. A Co-induced (6 x 6) superstructure is observed by LEED after annealing 0.25 A. Co deposited SiC surface at 700 degrees C for 5 min. At higher coverage, CoSi(1 x 1) domains rotated 30 degrees with respect to the underlying SiC substrate are formed after annealing 3.5 angstrom Co deposited SiC surface at 300 degrees C for 5 min. The LEED patterns as a function of Cc coverage and annealing temperature are also reported. (c) 2005 Elsevier B.V. All rights reserved.