Stability of sulfur-passivated facets of InGaAs-AlGaAs laser diodes

被引:12
作者
Beister, G
Maege, J
Sebastian, J
Erbert, G
Weixelbaum, L
Weyers, M
Wurfl, J
Daga, OP
机构
[1] Ferdinand-Braun-Inst. F. H., D-12489 Berlin
[2] Ctrl. Electronics Eng. Res. Inst. P.
关键词
D O I
10.1109/68.531810
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The facets of GaAs-AlGaAs ridge waveguide (RW) laser diodes were passivated using (NH4)(2)S-x. The effectiveness of this procedure was checked by electroluminescence power-voltage-current (P-V-I) measurements that provide information on the changes in the density of surface states, Using this nondestructive method, the degradation of the passivation under ambient atmosphere has been studied. Capping with silicon nitride is found to stabilize the sulfur passivation and avoid degradation.
引用
收藏
页码:1124 / 1126
页数:3
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