SURFACE-STRUCTURE OF (NH4)2SX-TREATED GAAS (100) IN AN ATOMIC-RESOLUTION

被引：31

作者：

YOKOI, N ^{[1
]}

ANDOH, H ^{[1
]}

TAKAI, M ^{[1
]}

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 19期

关键词：

D O I：

10.1063/1.111531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The three-dimensional structure of a GaAs (100) surface, treated in a (NH4)2Sx solution and annealed at 200-degrees-C, was studied in an atomic scale by x-ray photoemission spectroscopy (XPS), high-resolution Rutherford backscattering spectroscopy (RBS), and scanning tunneling microscopy (STM). XPS spectra showed that S termination could suppress oxidization of the surface in the air and that S atoms on a GaAs surface bonded As atoms. The disorder of atomic sites in the surface region of a S-terminated GaAs was found by RBS channeling spectra to be smaller than that of an untreated sample. The thickness of the sulfur layer on GaAs was found to be about 1.5 monolayers from RBS measurement. STM observation of the S-terminated surface revealed a 1X1 lateral structure of the sulfur layer on the GaAs (100) surface.

引用

页码：2578 / 2580

页数：3

共 11 条

[1]

BRIGGS D, 1983, PRACTICAL SURFACE AN

[2] THE EFFECT OF (NH4)2S TREATMENT ON THE INTERFACE CHARACTERISTICS OF GAAS MIS STRUCTURES [J].

FAN, JF ;

OIGAWA, H ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (07) :L1331-L1333

[3] MARKED REDUCTION OF THE SURFACE-INTERFACE STATES OF GAAS BY (NH4)2SX TREATMENT [J].

FAN, JF ;

KURATA, Y ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2255-L2257

[4] MEDIUM ENERGY ION-SCATTERING USING A TOROIDAL ANALYZER COMBINED WITH A MICROBEAM LINE [J].

KINOMURA, A ;

TAKAI, M ;

MATSUMOTO, K ;

NAMBA, S ;

AGAWA, Y .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4) :576-579

[5] STRUCTURE OF S ON PASSIVATED GAAS (100) [J].

LU, ZH ;

GRAHAM, MJ ;

FENG, XH ;

YANG, BX .

APPLIED PHYSICS LETTERS, 1993, 62 (23) :2932-2934

[6]

NANNICHI Y, 1990, 22ND C SOL STAT DEV, P453

[7] 1ST-PRINCIPLES STUDY OF SULFUR PASSIVATION OF GAAS(001) SURFACES [J].

OHNO, T ;

SHIRAISHI, K .

PHYSICAL REVIEW B, 1990, 42 (17) :11194-11197

[8]

OHNO T, 1991, SURF SCI, V255, P229, DOI 10.1016/0039-6028(91)90679-M

[9] KINETICS OF OXIDATION ON DIFFERENTLY TREATED GAAS (100) SURFACES STUDIED BY XPS AND STM [J].

RICHTER, R ;

HARTNAGEL, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (09) :2879-2883

[10] SURFACE-STRUCTURE OF SELENIUM-TREATED GAAS (001) STUDIED BY FIELD-ION SCANNING TUNNELING MICROSCOPY [J].

SHIGEKAWA, H ;

HASHIZUME, T ;

OIGAWA, H ;

MOTAI, K ;

MERA, Y ;

NANNICHI, Y ;

SAKURAI, T .

APPLIED PHYSICS LETTERS, 1991, 59 (23) :2986-2988

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