STRUCTURE OF S ON PASSIVATED GAAS (100)

被引：88

作者：

LU, ZH

GRAHAM, MJ

FENG, XH

YANG, BX

机构：

[1] UNIV WISCONSIN,SYNCHROTRON RADIAT CTR,MADISON,WI 53706

[2] UNIV CHICAGO,CARS,CHICAGO,IL 60637

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 23期

关键词：

D O I：

10.1063/1.109201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoelectron spectroscopy (XPS) and E-polarization-dependent S K-edge x-ray absorption near-edge structure (XANES) are used to characterize the chemical structure and site location of S on the (NH4)2S-treated GaAs (100) surface. XPS studies show that S forms chemical bonds with both Ga and As on surfaces treated only with (NH4)2S. After receiving a sufficient water rinse, only Ga-S bonds remain on the surface. Photon E polarization-dependent XANES studies show that S is bridge bonded to Ga in the [011] azimuth.

引用

页码：2932 / 2934

页数：3

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