KINETICS OF OXIDATION ON DIFFERENTLY TREATED GAAS (100) SURFACES STUDIED BY XPS AND STM

被引：16

作者：

RICHTER, R

HARTNAGEL, HL

机构：

[1] Institutfur Hochfrequenztecbnik, Technische Hochschule Darmstadt, 6100, Darmstadt

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 09期

关键词：

D O I：

10.1149/1.2087092

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The kinetics of oxidation on GaAs (100) surfaces after different chemical treatments are studied by XPS and STM. Etching in an alkaline solution containing NH4OH, photochemical etching and sulfur passivation in a (NH4)2S solution are compared regarding oxidation, surface stability in air, and electrical homogeneity. In contrast to alkaline etching, photochemical etching delays oxidation, and sulfur passivation makes the surface resistant to a subsequent uptake of oxygen for at least 50h in air. STM images after photochemical treatment show larger inhomogeneities than after passivation, and changes in surface structures in air are recorded correlating with the degree of oxidation. copyright. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：2879 / 2883

页数：5

共 37 条

[1] AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF CHEMICALLY ETCHED GAAS
ALNOT, P
WYCZISK, F
FRIEDERICH, A
[J]. SURFACE SCIENCE, 1985, 162 (1-3) : 708 - 716
[2] PEROXIDE ETCH CHEMISTRY ON -LESS-THAN-100-GREATER-THAN-IN0.53GA0.47AS
ASPNES, DE
STOCKER, HJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 413 - 416
[3] STABILITY OF (100) GAAS-SURFACES IN AQUEOUS-SOLUTIONS
ASPNES, DE
STUDNA, AA
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1071 - 1073
[4] THE EFFECTS OF SURFACE TREATMENTS ON THE PT/N-GAAS SCHOTTKY INTERFACE
AYDINLI, A
MATTAUCH, RJ
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 551 - 558
[5] ON THE GROWTH MODE OF OXIDE-FILMS ON CLEAVED GAAS(110) SURFACES AT ROOM-TEMPERATURE
BARTELS, F
MONCH, W
[J]. SOLID STATE COMMUNICATIONS, 1986, 57 (08) : 571 - 574
[6] OXIDATION-STATES AND FERMI-LEVEL PINNING ON GAAS(1 1 0) SURFACE
BERKOVITS, VL
KISELEV, VA
MINASHVILI, TA
SAFAROV, VI
[J]. SOLID STATE COMMUNICATIONS, 1988, 65 (05) : 385 - 388
[7] COMPARISON OF SURFACE-PROPERTIES OF SODIUM SULFIDE AND AMMONIUM SULFIDE PASSIVATION OF GAAS
BESSER, RS
HELMS, CR
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) : 4306 - 4310
[8] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY
BINNING, G
ROHRER, H
GERBER, C
WEIBEL, E
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (01) : 57 - 61
[9] EFFECTS OF NA2S AND (NH4)2S EDGE PASSIVATION TREATMENTS ON THE DARK CURRENT-VOLTAGE CHARACTERISTICS OF GAASPN DIODES
CARPENTER, MS
MELLOCH, MR
LUNDSTROM, MS
TOBIN, SP
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (25) : 2157 - 2159
[10] X-RAY PHOTOELECTRON-SPECTROSCOPY OF AMMONIUM SULFIDE TREATED GAAS(100) SURFACES
COWANS, BA
DARDAS, Z
DELGASS, WN
CARPENTER, MS
MELLOCH, MR
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (04) : 365 - 367

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