AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF CHEMICALLY ETCHED GAAS

被引：24

作者：

ALNOT, P

WYCZISK, F

FRIEDERICH, A

机构：

来源：

SURFACE SCIENCE | 1985年 / 162卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(85)90970-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：708 / 716

页数：9

共 16 条

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SCOTT, MD
[J]. SURFACE AND INTERFACE ANALYSIS, 1981, 3 (06) : 269 - 271
[6] GODDARD WA, 1979, J VAC SCI TECHNOL, V16, P1313
[7] CHEMICAL DEPTH PROFILES OF THE GAAS-NATIVE OXIDE INTERFACE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1045 - 1051
[8] XPS ANALYSIS OF (100) GAAS-SURFACES AFTER APPLYING A VARIETY OF TECHNOLOGY-ETCHANTS
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HARTNAGEL, HL
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (06) : 589 - 594
[9] MICROSCOPIC EFFECTS AT GAAS/GE(100) MOLECULAR-BEAM-EPITAXY INTERFACES - SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY
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CHIARADIA, P
SANG, HW
ZURCHER, P
BAUER, RS
[J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2146 - 2156
[10] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY
LEY, L
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SHIRLEY, DA
[J]. PHYSICAL REVIEW B, 1974, 9 (02): : 600 - 621

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