Electric-field-aligned vertical growth and field emission properties of In2O3 nanowires -: art. no. 143104

被引：45

作者：

Li, SQ

Liang, YX

Wang, TH ^{[1
]}

机构：

[1] Hunan Univ, Micronano Technol Res Ctr, Changsha 410082, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 14期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2076438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertically aligned In2O3 nanowires are grown on InAs substrates by an electric field in the plasma sheath. The In2O3 nanowires are single crystalline with diameters less than 10 nm. Field emission results show that the aligned In2O3 nanowires have lower turn-on and threshold electric fields than nonaligned ones. This is discussed in terms of orientation, emitter shapes, and density of the In2O3 nanowires. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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