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Understanding quasi-ballistic transport in nano-MOSFETs: Part I - Scattering in the channel, and in the drain

被引：126
作者：
Palestri, P [1 ]
Esseni, D
Eminente, S
Fiegna, C
Sangiorgi, E
Selmi, L
机构：
[1] Univ Udine, DIEGM, I-33100 Udine, Italy
[2] ARCES Ctr, I-40125 Bologna, Italy
[3] Univ Bologna, DEIS, Bologna, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 12期
关键词：
back-scattering; ballistic transport; Monte Carlo (MC) method; MOSFETs; semiconductor device modeling; silicon-on-insulator (SOI);
D O I：
10.1109/TED.2005.859593
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, and in Part II, Monte Carlo (MC) simulations including quantum corrections to the potential and calibrated scattering models are used to study electronic transport in bulk and double-gate silicon-on-insulator MOSFETs with L-G down to 14-nm designed according to the 2003 International Technology Roadmap for Semiconductors. Simulations with and without scattering are used to assess the influence of quasi-ballistic transport on the MOSFET on-current. We analyze in detail the flux of back-scattered carriers. The role of scattering in different parts of the device is clarified and the MC results are compared to simple models for quasi-ballistic transport presented in the literature.
引用
收藏
页码：2727 / 2735
页数：9
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