Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study

被引：10

作者：

Eminente, S ^{[1
]}

Esseni, D ^{[1
]}

Palestri, P ^{[1
]}

Fiegna, C ^{[1
]}

Selmi, L ^{[1
]}

Sangiorgi, E ^{[1
]}

机构：

[1] ARCES Ctr, I-40100 Bologna, Italy

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419235

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we have simulated the ION and its ballistic limit I-BL of MOSFETs designed according to the 2003 Roadmap down to the 45 nm node, by using a Full-Band, self-consistent Monte Carlo simulator with quantum mechanical corrections. Our results show that scattering plays an important role by limiting the current for gate length down to at least 14 nm; the impact of quasi-ballistic transport increases for L-G below approximately 50 nm and contribute most part of the ION improvements related to scaling. Thanks to a lower transversal electric field, the DG SOI MOSFETs with low channel doping allow to get closer to the ballistic limit than bulk counterparts.

引用

页码：609 / 612

页数：4

共 10 条

[1] An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode [J].