Development of Accurate On-Wafer, Cryogenic Characterization Techniques

被引：26

作者：

Laskar, J. ^{[1
]}

Bautista, J. J. ^{[2
]}

Nishimoto, M. ^{[3
]}

Hamai, M. ^{[3
]}

Lai, R. ^{[3
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[3] TRW Elect Syst & Technol Div, Redondo Beach, CA 90278 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1996年 / 44卷 / 07期

关键词：

D O I：

10.1109/22.508659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Significant advances in the development of high electron mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hv/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting-insulator-superconducting (SIS) front-ends in the 1-100 GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's is accurate and repeatable device measurements at cryogenic temperatures. A cryogenic on-wafer noise and scattering parameter measurement system has been developed to provide a systematic investigation of HEMT noise characteristics. In addition, an improved parameter extraction technique has been developed to help understand the relationship between device structure and LNA performance.

引用

页码：1178 / 1183

页数：7

共 23 条

[11] CRYOGENIC VACUUM HIGH-FREQUENCY PROBE STATION [J].

LASKAR, J ;

KOLODZEY, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (05) :1161-1165

[12]

LASKAR J, 1993, MICROWAVE J, V36, P104

[13]

Leichti C. A., 1976, IEEE T MICROW THEORY, VMTT-24, P365

[14] A MULTILINE METHOD OF NETWORK ANALYZER CALIBRATION [J].

MARKS, RB .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1991, 39 (07) :1205-1215

[15] ON-WAFER MICROWAVE MEASUREMENT SETUP FOR INVESTIGATIONS ON HEMTS AND HIGH-TC SUPERCONDUCTORS AT CRYOGENIC TEMPERATURES DOWN TO 20-K [J].

MESCHEDE, H ;

REUTER, R ;

ALBERS, J ;

KRAUS, J ;

PETERS, D ;

BROCKERHOFF, W ;

TEGUDE, FJ ;

BODE, M ;

SCHUBERT, J ;

ZANDER, W .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (12) :2325-2331

[16]

Pospierszalski M. W., 1991, 1991 IEEE MTT-S International Microwave Symposium Digest (91CH2870-4), P1117, DOI 10.1109/MWSYM.1991.147212

[17]

POSPIESZALSKI M, 1992, IEEE MTT S, P1369

[18] MODELING OF NOISE PARAMETERS OF MESFET AND MODFET AND THEIR FREQUENCY AND TEMPERATURE-DEPENDENCE [J].

POSPIESZALSKI, MW .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (09) :1340-1350

[19]

POSPIESZALSKI MW, 1994, IEEE MTT-S, P1345, DOI 10.1109/MWSYM.1994.335301

[20]

Smuk J. W., 1989, IEEE 1989 MTT-S International Microwave Symposium Digest (Cat. No.89CH2725-0), P1195, DOI 10.1109/MWSYM.1989.38938

← 1 2 3 →