Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate

被引：17

作者：

Han, PD

Wang, ZG

Duan, XF

Zhang, Z

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 25期

关键词：

D O I：

10.1063/1.1380731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN films were grown in pairs on two opposite c faces of Al2O3 substrate by low-pressure metal-organic vapor phase epitaxy, and studied by scanning electron microscopy and converged beam electron diffraction. It is found that GaN film on the c-Al2O3 whose c face is forward to its crystal seed has [0001] polarity, and the other film on the C-Al2O3 whose c face is backward to its crystal seed has [000 (1) over bar] polarity. (C) 2001 American Institute of Physics.

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收藏

页码：3974 / 3976

页数：3

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