Spin-dependent tunneling through high-k LaAlO3 -: art. no. 212501

被引：25

作者：

Garcia, V

Bibes, M

Maurice, JL

Jacquet, E

Bouzehouane, K

Contour, JP

Barthélémy, A

机构：

[1] Univ Paris 06, Inst NanoSci Paris, CNRS, UMR 7588, F-75015 Paris, France

[2] Univ Paris 07, Inst NanoSci Paris, CNRS, UMR 7588, F-75015 Paris, France

[3] CNRS, Unite Mixte Phys, Domaine Corbeville, F-91404 Orsay, France

[4] Univ Paris 11, Inst Electron Fondamentale, F-91405 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 21期

关键词：

D O I：

10.1063/1.2132526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2/3Sr1/3MnO3/LAO/La2/3Sr1/3MnO3 junctions, we estimate a spin polarization of 77% at low temperature for the La2/3Sr1/3MnO3/LAO interface. Remarkably, the TMR of La2/3Sr1/3MnO3/LAO/Co junctions at low bias is negative, evidencing a negative spin polarization of Co at the interface with LAO, and its bias dependence is very similar to that of La2/3Sr1/3MnO3/SrTiO3/Co junctions. We discuss possible reasons for this behavior. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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[21]

PARKIN S, COMMUNICATION

[22] Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers [J].