Development and process control of magnetic tunnel junctions for magnetic random access memory devices

被引：5

作者：

Kula, W ^{[1
]}

Wolfman, J ^{[1
]}

Ounadjela, K ^{[1
]}

Chen, E ^{[1
]}

Koutny, W ^{[1
]}

机构：

[1] Cypress Semiconductor, Silicon Magnet Syst, San Jose, CA 95134 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.1558241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the development and process control of magnetic tunnel junctions (MTJs) for magnetic random access memory (MRAM) devices. It is demonstrated that MTJs with high magnetoresistance similar to40% at 300 mV, resistance-area product (RA) similar to1-3 kOmega mum(2), low intrinsic interlayer coupling (H-in) similar to2-3 Oe, and excellent bit switching characteristics can be developed and fully integrated with complementary metal-oxide-semiconductor circuitry into MRAM devices. MTJ uniformity and repeatability level suitable for mass production has been demonstrated with the advanced processing and monitoring techniques. (C) 2003 American Institute of Physics.

引用

页码：8373 / 8375

页数：3

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