Photoluminescence study of deep levels in Cr-doped ZnSe

被引:55
作者
Bhaskar, S
Dobal, PS
Rai, BK
Katiyar, RS
Bist, HD
Ndap, JO
Burger, A
机构
[1] Univ Puerto Rico, Dept Phys, Rio Piedras, PR 00931 USA
[2] Indian Inst Technol, Dept Phys, Kanpur, Uttar Pradesh, India
[3] Indian Inst Technol, Ctr Laser Technol, Kanpur, Uttar Pradesh, India
[4] Fisk Univ, Dept Phys, Nashville, TN 37208 USA
关键词
D O I
10.1063/1.369404
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single crystals of intrinsic ZnSe were grown by the seeded physical vapor transport method and the diffusion doping was utilized to incorporate Cr in these crystals. The radiative recombinations in these samples with Cr concentration in the range 1.0 - 10.2 x 10(19) cm(-3) were studied by the steady state photoluminescence technique. It was found that the Cr deep centers inhibit the band-to-band emission in Cr-doped ZnSe. Except in undoped single crystals, no emission corresponding to the band-to-band transition was observed from any of the doped samples. Instead, the higher wavelength emissions associated with Cr deep levels were obtained. This capture of photoexcited carriers by deep centers was verified using different excitation wavelengths. The role of chromium impurities in nonradiative recombination processes was also evidenced from the sharp decreases in the deep level emission intensity with increasing Cr concentration. (C) 1999 American Institute of Physics. [S0021-8979(99)07701- 4].
引用
收藏
页码:439 / 443
页数:5
相关论文
共 29 条
  • [11] MODIFIED DONOR-ACCEPTOR PAIR LUMINESCENCE IN HEAVILY NITROGEN-DOPED ZINC SELENIDE
    KOTHANDARAMAN, C
    NEUMARK, GF
    PARK, RM
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (22) : 3307 - 3309
  • [12] KRASNOV AN, 1992, SOV PHYS SEMICOND+, V26, P645
  • [13] LUMINESCENCE OF DEEP PHOSPHORUS AND ARSENIC IMPURITIES IN ZNSE AT HIGH-PRESSURE
    LI, MM
    STRACHAN, DJ
    RITTER, TM
    TAMARGO, M
    WEINSTEIN, BA
    [J]. PHYSICAL REVIEW B, 1994, 50 (07): : 4385 - 4390
  • [14] Spectroscopy of donor-acceptor pairs in nitrogen-doped ZnSe
    Morhain, C
    Tournie, E
    Neu, G
    Ongaretto, C
    Faurie, JP
    [J]. PHYSICAL REVIEW B, 1996, 54 (07): : 4714 - 4721
  • [15] STIMULATED-EMISSION VIA INELASTIC EXCITON-EXCITON SCATTERING IN ZNSE EPILAYERS
    NEWBURY, PR
    SHAHZAD, K
    CAMMACK, DA
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (10) : 1065 - 1067
  • [16] Cr2+-doped zinc chalcogenides as efficient, widely tunable mid-infrared lasers
    Page, RH
    Schaffers, KI
    DeLoach, LD
    Wilke, GD
    Patel, FD
    Tassano, JB
    Payne, SA
    Krupke, WF
    Chen, KT
    Burger, A
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (04) : 609 - 619
  • [17] Raman and photoluminescence studies on intrinsic and Cr-doped ZnSe single crystals
    Rai, BK
    Katiyar, RS
    Chen, KT
    Burger, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 6011 - 6017
  • [18] QUENCHING OF LUMINESCENCE BY NONRADIATIVE TUNNELLING
    SEARLE, TM
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (02): : 163 - 175
  • [19] BOUND EXCITON LUMINESCENCE IN ZNSE UNDER HYDROSTATIC-PRESSURE
    SHAN, W
    HAYS, JM
    YANG, XH
    SONG, JJ
    CANTWELL, E
    ALDRIDGE, J
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (06) : 736 - 738
  • [20] IRON AND CHROMIUM IMPURITIES IN ZNSE AS CENTERS OF NONRADIATIVE RECOMBINATION
    SURMA, M
    GODLEWSKI, M
    SURKOVA, TP
    [J]. PHYSICAL REVIEW B, 1994, 50 (12): : 8319 - 8324